September 1996
NDT452P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
____________________________________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
NDT452P
Units
V
DSS
Drain-Source Voltage
-30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current
- Continuous
(Note 1a)
3
A
- Pulsed
20
P
D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 150
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
12
C/W
* Order option J23Z for cropped center drain lead.
NDT452P Rev. C3
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and DC motor control.
-3A, -30V. R
DS(ON)
= 0.18
@ V
GS
= -10V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
D
D
S
G
D
S
G
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 A
-30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -24 V, V
GS
= 0 V
-2
A
T
J
= 55C
-25
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 A
-1
-2
-3
V
T
J
=125C
-0.85
-1.7
-2.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -3 A
0.15
0.18
T
J
=125C
0.23
0.32
V
GS
= -4.5 V, I
D
= - 2.2 A
0.27
0.32
I
D(on)
On-State Drain Current
V
GS
= -10 V, V
DS
= -5 V
-15
A
V
GS
= -4.5 V, V
DS
= -5 V
-4.5
g
FS
Forward Transconductance
V
DS
= -15 V, I
D
= -3 A
3.7
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
525
pF
C
oss
Output Capacitance
300
pF
C
rss
Reverse Transfer Capacitance
130
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
V
DD
= -10 V, I
D
= -1.0 A,
V
GEN
= -10 V, R
GEN
= 6
8
40
ns
t
r
Turn - On Rise Time
15
40
ns
t
D(off)
Turn - Off Delay Time
25
90
ns
t
f
Turn - Off Fall Time
8
50
ns
Q
g
Total Gate Charge
V
DS
= -10 V,
I
D
= -3 A, V
GS
= -10 V
15
25
nC
Q
gs
Gate-Source Charge
1.6
4
nC
Q
gd
Gate-Drain Charge
4.5
8
nC
NDT452P Rev. C3
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
-2.5
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -3 A
(Note 2)
-1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed by
design while R
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
-
T
A
R
J A
(
t
)
=
T
J
-
T
A
R
J C
+
R
CA
(
t
)
=
I
D
2
(
t
)
R
DS
(
ON
)
T
J
Typical R
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 42
o
C/W when mounted on a 1 in
2
pad of 2oz copper.
b. 95
o
C/W when mounted on a 0.066 in
2
pad of 2oz copper.
c. 110
o
C/W when mounted on a 0.0123 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDT452P Rev. C3
1a
1b
1c
NDT452P Rev. C3
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 6. Gate Threshold Variation with
Temperature.
Figure 5. Transfer Characteristics.
-10
-8
-6
-4
-2
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = -4.0V
GS
D
R , NORMALIZED
DS(on)
-4.5V
-8.0V
-10V
-6.0V
-7.0V
-5.0V
-50
-25
0
25
50
75
100
125
150
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = -10V
GS
I = -3A
D
R , NORMALIZED
DS(ON)
-10
-8
-6
-4
-2
0
0.5
1
1.5
2
2.5
3
3.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125C
J
25C
D
V = -4.5 V
GS
-4.5V
-10V
125C
25C
R , NORMALIZED
DS(on)
-10V
-5
-4
-3
-2
-1
-10
-8
-6
-4
-2
0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25
125
V = -10V
DS
GS
D
T = -55C
J
-50
-25
0
25
50
75
100
125
150
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
I = -250A
D
V = V
DS
GS
J
V , NORMALIZED
th
-5
-4
-3
-2
-1
0
-18
-15
-12
-9
-6
-3
0
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
-8.0 -7.0
-6.0
-5.0
-3.0
V = -10V
GS
DS
D
-4.0
NDT452P Rev. C3
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
Typical Electrical Characteristics
(continued)
-50
-25
0
2 5
5 0
7 5
100
125
150
0.85
0.9
0.95
1
1.05
1.1
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
BV , NORMALIZED
DSS
I = -250A
D
J
-2
-1.6
-1.2
-0.8
-0.4
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
T = 125C
J
25C
-55C
V = 0V
GS
SD
S
0
4
8
12
16
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-V , GATE-SOURCE VOLTAGE (V)
g
GS
I = -3A
V = -10V
D
DS
0.1
0.2
0.5
1
2
5
10
20
1 0 0
2 0 0
3 0 0
5 0 0
7 0 0
1 0 0 0
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0V
GS
C oss
C rss
D
S
-V
DD
R
L
V
OUT
V
GS
DUT
V
IN
R
GEN
G
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
o n
off
d(off)
f
r
d(on)
t
t
t
t
t
t
INVERTED
10%
PULSE WIDTH
PDF 
ZIP